MT4C1M16C3DJ-6 View Datasheet(PDF) - Micron Technology
Part Name
Description
Manufacturer
MT4C1M16C3DJ-6 Datasheet PDF : 22 Pages
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1 MEG x 16
FPM DRAM
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12; notes can be found on page 9); VCC (MIN) ≤ VCC ≤ VCC (MAX)
AC CHARACTERISTICS
PARAMETER
Access time from column address
Column-address hold time (referenced to RAS#)
Column-address setup time
Row-address setup time
Column address to WE# delay time
Access time from CAS
Column-address hold time
CAS# pulse width
CAS# LOW to “Don’t Care” during Self Refresh
CAS# hold time (CBR Refresh)
Last CAS# going LOW to first CAS# to return HIGH
CAS# to output in Low-Z
CAS# precharge time
Access time from CAS# precharge
CAS# to RAS# precharge time
CAS# hold time
CAS# setup time (CBR Refresh)
CAS# to WE# delay time
WRITE command to CAS# lead time
Data-in hold time
Data-in setup time
Output disable
Output enable
OE# hold time from WE# during
READ-MODIFY-WRITE cycle
Output buffer turn-off delay
OE# setup prior to RAS# during HIDDEN Refresh cycle
FAST-PAGE-MODE READ or WRITE cycle time
FAST-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row-address hold time
RAS# pulse width
RAS# pulse width (FAST PAGE MODE)
RAS# pulse width (Self Refresh)
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS)
READ command setup time
Refresh period (1,024 cycles)
Refresh period (1,024 cycles) “S” version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time (Self Refresh)
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
SYMBOL
tAA
tAR
tASC
tASR
tAWD
tCAC
tCAH
tCAS
tCHD
tCHR
tCLCH
tCLZ
tCP
tCPA
tCRP
tCSH
tCSR
tCWD
tCWL
tDH
tDS
tOD
tOE
tOEH
tOFF
tORD
tPC
tPRWC
tRAC
tRAD
tRAH
tRAS
tRASP
tRASS
tRC
tRCD
tRCH
tRCS
tREF
tREF
tRP
tRPC
tRPS
tRRH
tRSH
tRWC
MIN
38
0
0
42
8
8
15
8
10
0
8
5
38
5
28
8
8
0
0
8
-5
MAX
25
15
10,000
28
12
12
0
12
0
20
47
50
9
9
50
10,000
50
125,000
100
84
11
0
0
16
128
30
5
90
0
13
116
MIN
45
0
0
49
10
10
15
10
10
0
5
5
45
5
35
10
10
0
0
10
-6
MAX
30
15
10,000
35
15
15
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
27
18
29
27
32, 35
4, 28
30
26, 29
30
28
28
28
4, 27
18, 27
23, 29
19, 29
19, 29
17, 26, 29
22
20
0
15
ns 11, 17, 23
0
ns
25
ns
31
56
ns
31
60
ns
12
ns
20
10
ns
60
10,000
ns
60
125,000 ns
100
µs
104
ns
14
ns
14, 27
0
ns
16, 28
0
ns
27
16
ms
128
ms
40
ns
5
ns
105
ns
0
ns
16
15
ns
36
140
ns
1 Meg x 16 FPM DRAM
D51_5V_B.p65 – Rev. B; Pub 3/01
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
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