MTSF3N03HD
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
1 inch SQ.
FR–4 or G–10 PCB
Figure 1 below
Steady State
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
Minimum
FR–4 or G–10 PCB
Figure 2 below
Steady State
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
Operating and Storage Temperature Range
W Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 5.0 mH, RG = 25 )
(1) Repetitive rating; pulse width limited by maximum junction temperature.
Symbol
VDSS
VDGR
VGS
RTHJA
PD
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
TJ, Tstg
EAS
Max
30
30
± 20
70
1.79
14.29
5.7
4.5
45
160
0.78
6.25
3.8
3.0
30
– 55 to 150
200
Unit
V
V
V
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
°C
mJ
Figure 1. 1.0 Inch Square FR–4 or G–10 PCB
Figure 2. Minimum FR–4 or G–10 PCB
2
Motorola TMOS Power MOSFET Transistor Device Data