NIF5002N View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NIF5002N

Self−Protected FET with Temperature and Current Limit

ON Semiconductor 

NIF5002N

Preferred Device

Self−Protected FET

with Temperature and

Current Limit

42 V, 2.0 A, Single N−Channel, SOT−223

HDPlust devices are an advanced series of power MOSFETs

which utilize ON Semiconductors latest MOSFET technology process

to achieve the lowest possible on−resistance per silicon area while

incorporating smart features. Integrated thermal and current limits

work together to provide short circuit protection. The devices feature

an integrated Drain−to−Gate Clamp that enables them to withstand

high energy in the avalanche mode. The Clamp also provides

additional safety margin against unexpected voltage transients.

Electrostatic Discharge (ESD) protection is provided by an integrated

Gate−to−Source Clamp.

Features

• Current Limitation

• Thermal Shutdown with Automatic Restart

• Short Circuit Protection

• IDSS Specified at Elevated Temperature

• Avalanche Energy Specified

• Slew Rate Control for Low Noise Switching

• Overvoltage Clamped Protection

• Pb−Free Packages are Available

Applications

• Lighting

• Solenoids

• Small Motors

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain−to−Source Voltage Internally Clamped

Drain−to−Gate Voltage Internally Clamped

(RG = 1.0 MW)

Gate−to−Source Voltage

Continuous Drain Current

Power Dissipation

@ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

@ TT = 25°C (Note 3)

Operating Junction and Storage Temperature

VDSS

VDGR

VGS

ID

PD

TJ, Tstg

42

V

42

V

"14

V

Internally Limited

1.1

W

1.7

8.9

−55 to °C

150

Single Pulse Drain−to−Source Avalanche Energy EAS

(VDD = 32 V, VG = 5.0 V, IPK = 1.0 A,

L = 300 mH, RG(ext) = 25 W)

150

mJ

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

© Semiconductor Components Industries, LLC, 2006

1

April, 2006 − Rev. 7

http://onsemi.com

V(BR)DSS

(Clamped)

42 V

RDS(ON) TYP

165 mW @ 10 V

ID MAX

2.0 A*

*Max current limit value is dependent on input

condition.

Drain

Gate

Input

Overvoltage

Protection

RG

ESD Protection

MPWR

Temperature Current Current

Limit

Limit Sense

Source

4

123

SOT−223

CASE 318E

STYLE 3

MARKING DIAGRAM

1

GATE

2

DRAIN

3

SOURCE

4

DRAIN

A

= Assembly Location

Y

= Year

W

= Work Week

5002N = Specific Device Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

Publication Order Number:

NIF5002N/D

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