NIF62514 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NIF62514

Self-Protected FET with Temperature and Current Limit

ON Semiconductor 

NIF62514

4

VDS = 32 V

3

2

1

Typical

0

−50 −25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Drain−to−Source Resistance versus

Junction Temperature

2.50

2.25

2.00

1.75

1.50

1.25

VTH + 4 Sigma

VTH − 4 Sigma

ID = 150 mA

VTH

1.00

0.75

0.50

0.25

0

−50 −30 −10 10 30 50 70 90 110 130 150

TEMPERATURE (°C)

Figure 8. Gate Threshold Voltage versus

Temperature

12

Current Limit

10

VGS = 10 V

8

Temperature Limit

6

VGS = 5 V

4

2

0

0

1

2

3

4

5

TIME (ms)

Figure 9. Short−circuit Response

100

Duty Cycle = 0.5

0.2

10 0.1

0.05

0.02

1 0.01

Single Pulse

0.1

0.00001

0.0001

0.001

0.01

t,TIME (S)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.1

D CURVES APPLY

FOR POWER

PULSE TRAIN SHOWN

READ TIME AT T1

TJ(pk) − TA = P(pk) RqJA(t)

RqJC @ R(t) for t ≤ 0.02

s

1

10

Figure 10. Transient Thermal Resistance

(Non−normalized Junction−to−Ambient mounted on minimum pad area)

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5

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