PMP5201G View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PMP5201G Datasheet PDF : 14 Pages
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Philips Semiconductors
PMP5201V; PMP5201G; PMP5201Y
PNP/PNP matched double transistors
Table 8. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VBE
base-emitter voltage VCE = −5 V;
IC = −2 mA
VCE = −5 V;
IC = −10 mA
Cc
collector capacitance VCB = −10 V;
IE = ie = 0 A;
f = 1 MHz
Ce
emitter capacitance VEB = −0.5 V;
IC = ic = 0 A;
f = 1 MHz
fT
transition frequency VCE = −5 V;
IC = −10 mA;
f = 100 MHz
NF
noise figure
VCE = −5 V;
IC = −0.2 mA;
RS = 2 kΩ;
f = 10 Hz to
15.7 kHz
VCE = −5 V;
IC = −0.2 mA;
RS = 2 kΩ;
f = 1 kHz;
B = 200 Hz
Per device
hFE1/hFE2 hFE matching
VBE1−VBE2 VBE matching
VCE = −5 V;
IC = −2 mA
VCE = −5 V;
IC = −2 mA
Min
[2] −600
[2] -
-
-
100
-
-
[3] 0.98
[4] -
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
Typ
−650
-
-
10
175
1.6
3.1
1
-
Max
−700
−760
2.2
-
-
-
-
-
2
Unit
mV
mV
pF
pF
MHz
dB
dB
mV
PMP5201V_G_Y_2
Product data sheet
Rev. 02 — 14 September 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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