RMPA2265 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

RMPA2265

Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz

Fairchild Semiconductor 

September 2005

RMPA2265

Dual Band WCDMA Power Edge™ Power Amplifier

Module 1850 to 1910 MHz and 1920 to 1980 MHz

Features

■ Single positive-supply operation and low power and shut-

down modes

■ 42% WCDMA efficiency at +28 dBm average output power

1920–1980 MHz

■ 39% WCDMA efficiency at 27.5 dBm average output power

1850–1910 MHz

■ Meets UMTS/WCDMA performance requirements in both

UMTS bands

■ Meets HSDPA performance requirements

■ Compact Lead-free compliant LCC package–

(3.0 x 3.0 x 1.0 mm nominal)

■ Internally matched to 50 Ohms and DC blocked RF

input/output

Device

General Description

The RMPA2265 power amplifier module (PAM) is designed for

WCDMA/HSDPA applications in both the 1850–1910 and 1920–

1980 MHz bands. The 2 stage PAM is internally matched to 50

Ohms to minimize the use of external components and features

a low-power mode to reduce standby current and DC power

consumption during peak phone usage. High power-added effi-

ciency and excellent linearity are achieved using Fairchild’s

InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process.

Functional Block Diagram

(Top View)

Vcc1 1

RF IN 2

Vmode 3

Vref 4

MMIC

Input

Match

DC Bias Control

8 Vcc2

Output

Match

7 RF OUT

6 GND

5 GND

(paddle ground on package bottom)

©2005 Fairchild Semiconductor Corporation

1

RMPA2265 Rev. K

www.fairchildsemi.com

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