S20S30 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
S20S30 Datasheet PDF : 8 Pages
| |||
Silicon Carbide Schottky Diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• No forward recovery
SDP20S30
SDB20S30
thinQ! SiC Schottky Diode
1 23
Product Summary
VRRM
300 V
Qc
23 nC
IF
2x10 A
P-TO220-3.SMD P-TO220-3-1.
Type
SDP20S30
SDB20S30
Package
P-TO220-3-1.
Ordering Code
Q67040-S4419
P-TO220-3.SMD Q67040-S4374
Marking
D20S30
S20S30
Maximum Ratings, at Tj = 25 °C, unless otherwise specified (per leg)
Parameter
Symbol
Value
Continuous forward current, TC=100°C
IF
10
RMS forward current, f=50Hz
IFRMS
14
Surge non repetitive forward current, sine halfwave IFSM
36
TC=25°C, tp=10ms
Repetitive peak forward current
IFRM
45
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
IFMAX
100
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
∫i2dt
6.5
VRRM
300
Surge peak reverse voltage
VRSM
300
Power dissipation, single diode mode, TC=25°C Ptot
65
Operating and storage temperature
Tj , Tstg
-55... +175
Unit
A
A²s
V
W
°C
Rev. 1.1
Page 1
2004-04-05
Share Link: 