S20S30 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

S20S30

Silicon Carbide Schottky Diode

Infineon Technologies 

9 Typ. capacitive charge vs. current slope

(per leg)Qc=f(diF/dt)

parameter: Tj = 150 °C

22

nC

IF*2

IF

18

IF*0.5

16

14

12

10

8

6

4

2

0

100 200 300 400 500 600 700 800 A/µs 1000

diF/dt

SDP20S30

SDB20S30

Rev. 1.1

Page 6

2004-04-05

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