SPI21N10 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

SPI21N10

SIPMOS® Power-Transistor

Infineon Technologies 

Preliminary data

SPI21N10

SPP21N10,SPB21N10

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min. typ. max.

Dynamic Characteristics

Transconductance

gfs

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS
2*ID*RDS(on)max , 6.5 12.4

-S

ID=15.0A

VGS=0V, VDS=25V,

-

650 865 pF

f=1MHz

-

140 186

-

80 120

VDD=50V, VGS=10V,

ID=21A, RG=13

-

10 15 ns

-

56 84

-

37 55

-

23 35

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Qgs

Qgd

VDD=80V, ID=21A

Gate charge total

Qg

VDD=80V, ID=21A,

VGS=0 to 10V

Gate plateau voltage

V(plateau) VDD=80V, ID=21A

Reverse Diode

Inverse diode continuous

IS

forward current

Inverse diode direct current, ISM

pulsed

TC=25°C

Inverse diode forward voltage VSD

Reverse recovery time

trr

Reverse recovery charge

Qrr

VGS=0V, IF=21A

VR=50V, IF =lS,

diF /dt=100A/µs

-

3.9 5.2 nC

- 15.5 23.3

- 28.9 38.4

-

6.2

-V

-

-

21 A

-

-

84

- 0.94 1.25 V

-

65 81.5 ns

-

153 192 nC

Page 3

2002-01-31

Share Link: