SPI11N65C3(2003) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
SPI11N65C3 Datasheet PDF : 14 Pages
| |||
SPP11N65C3, SPA11N65C3
SPI11N65C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
VDS
RDS(on)
ID
650 V
0.38 Ω
11 A
P-TO262-3-1 P-TO220-3-31 P-TO220-3-1
3
12
P-TO220-3-31
Type
SPP11N65C3
SPA11N65C3
SPI11N65C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4557
P-TO220-3-31 Q67040-S4554
P-TO262-3-1 Q67040-S4561
Marking
11N65C3
11N65C3
11N65C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=2.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=4A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_I
SPA
11
111)
7
71)
33
33
340
340
Unit
A
A
mJ
0.6
0.6
4
4
A
±20
±20 V
±30
±30
125
33 W
-55...+150
°C
Page 1
2003-08-15
Share Link: 