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Part Name
Description
SPU09N05 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
SPU09N05
SIPMOS® Power Transistor
Infineon Technologies
SPU09N05 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
SPD 09N05
Avalanche Energy
E
AS
=
f
(
T
j
)
parameter:
I
D
= 9.2 A,
V
DD
= 25 V
R
GS
= 25
Ω
40
mJ
Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D puls
= 9.2 A
SPD09N05
16
V
30
25
20
15
10
5
0
20
40
60
80 100 120 140
ËšC
180
T
j
Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
SPD09N05
66
V
64
62
60
58
56
54
52
50
-60 -20
20
60 100 140
ËšC
200
T
j
Data Sheet
8
12
10
0,2
V
DS max
0,8
V
DS max
8
6
4
2
0
0
2
4
6
8
nC
11
Q
Gate
06.99
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