DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SST25VF080B View Datasheet(PDF) - Silicon Storage Technology

Part Name
Description
Manufacturer
SST25VF080B
SST
Silicon Storage Technology SST
SST25VF080B Datasheet PDF : 36 Pages
First Prev 21 22 23 24 25 26 27 28 29 30 Next Last
A Microchip Technology Company
8 Mbit SPI Serial Flash
SST25VF080B
Data Sheet
Table 11:DC Operating Characteristics (SST25VF080B-80-xx-xxxx)
Symbol Parameter
IDDR
Read Current
IDDR3 Read Current
IDDW Program and Erase Current
ISB
Standby Current
ILI
Input Leakage Current
ILO
Output Leakage Current
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOL2 Output Low Voltage
VOH
Output High Voltage
Limits
Min Max Units Test Conditions
12
20
30
20
1
1
0.8
0.7 VDD
0.2
0.4
VDD-0.2
mA CE#=0.1 VDD/0.9 VDD@33 MHz, SO=open
mA CE#=0.1 VDD/0.9 VDD@80 MHz, SO=open
mA CE#=VDD
µA CE#=VDD, VIN=VDD or VSS
µA VIN=GND to VDD, VDD=VDD Max
µA VOUT=GND to VDD, VDD=VDD Max
V VDD=VDD Min
V VDD=VDD Max
V IOL=100 µA, VDD=VDD Min
V IOL=1.6 mA, VDD=VDD Min
V IOH=-100 µA, VDD=VDD Min
T11.0 1296
Table 12:Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
TPU-READ1
VDD Min to Read Operation
10
µs
TPU-WRITE1
VDD Min to Write Operation
10
µs
T12.0 1296
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 13:Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition Maximum
COUT1
Output Pin Capacitance
VOUT = 0V
12 pF
CIN1
Input Capacitance
VIN = 0V
6 pF
T13.0 1296
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 14:Reliability Characteristics
Symbol
Parameter
Minimum Specification Units Test Method
NEND1
TDR1
Endurance
Data Retention
10,000
100
Cycles JEDEC Standard A117
Years JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA JEDEC Standard 78
T14.0 1296
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
©2011 Silicon Storage Technology, Inc.
24
S71296-05-000
02/11

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]