SST25VF080B View Datasheet(PDF) - Silicon Storage Technology

Part Name

Description

Manufacturer

SST25VF080B

8 Mbit SPI Serial Flash

Silicon Storage Technology 

A Microchip Technology Company

8 Mbit SPI Serial Flash

SST25VF080B

Product Description

Data Sheet

SST’s 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low

pin-count package which occupies less board space and ultimately lowers total system costs. The

SST25VF080B devices are enhanced with improved operating frequency and lower power consump-

tion. SST25VF080B SPI serial flash memories are manufactured with SST’s proprietary, high-perfor-

mance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector

attain better reliability and manufacturability compared with alternate approaches.

The SST25VF080B devices significantly improve performance and reliability, while lowering power

consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for

SST25VF080B. The total energy consumed is a function of the applied voltage, current, and time of

application. Since for any given voltage range, the SuperFlash technology uses less current to pro-

gram and has a shorter erase time, the total energy consumed during any Erase or Program operation

is less than alternative flash memory technologies.

The SST25VF080B device is offered in 8-lead SOIC (200 mils), 8-lead SOIC (150 mils), 8-contact

WSON (6mm x 5mm), and 8-lead PDIP (300 mils) packages. See Figure 2 for pin assignments.

©2011 Silicon Storage Technology, Inc.

2

S71296-05-000

02/11

Share Link: