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T2526(2003) View Datasheet(PDF) - Atmel Corporation

Part Name
Description
Manufacturer
T2526
(Rev.:2003)
Atmel
Atmel Corporation Atmel
T2526 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
T2526
Thermal Resistance
Parameter
Junction ambient SO8
Junction ambient TSSOP8
Symbol
RthJA
RthJA
Value
130
tbd
Unit
k/W
K/W
Electrical Characteristics, 3-V Operation
Tamb = 25°C, VS = 3 V unless otherwise specified.
No. Parameters
Test Conditions
Pin Symbol Min. Typ. Max. Unit Type*
1 Supply
1.1 Supply-voltage range
1.2 Supply current
2 Output
IIN =0
1
VS
2.7
3.0
3.3
V
C
1
IS
0.7
0.9
1.3
mA
B
2.1 Internal pull-up resistor(1) Tamb = 25°C
1, 3
See Figure 12 on page 9
RPU
2.2 Output voltage low
R2 = 2.4 kW
See Figure 12 on page 9
3, 6
VOL
30/40
kW
A
250
mV
B
2.3 Output voltage high
3, 1
VOH
VS - 0.25
Vs
V
B
2.4
Output current clamping
R2 = 0
See Figure 12 on page 9
3, 6
IOCL
8
mA
B
3 Input
3.1 Input DC current
VIN = 0
See Figure 12 on page 9
5
IIN_DCMAX
-150
µA
C
3.2
Input DC current
See Figure 5 on page 6
VIN = 0; Vs = 3 V
Tamb = 25°C
5
Minimum detection
Test signal:
3.3 threshold current
See Figure 11 on page 9
3
See Figure 3 on page 6 VS = 3 V
Minimum detection
Tamb= 25°C, IIN_DC=1µA
square pp
3.4
threshold current with AC
current disturbance
burst N=16
IIN_AC100 =
f = f0; tPER = 10 ms
3
3 µA at 100 Hz
Figure 10 on page 8
BER = 50(2)
IIN_DCMAX
IEemin
IEemin
-350
-700
-1500
µA
B
pA
B
pA
C
Test signal:
See Figure 11 on page 9
VS = 3 V, Tamb = 25°C
Maximum detection
IIN_DC = 1 µA
3.5 threshold current with square pp
3
VIN > 0V
burst N = 16
f = f0; tPER = 10 ms
Figure 10 on page 8
BER = 5%(2)
IEemax
-200
µA
D
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
3
4597C–AUTO–11/03

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