TC660 View Datasheet(PDF) - TelCom Semiconductor, Inc
Part Name
Description
Manufacturer
TC660 Datasheet PDF : 8 Pages
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100mA CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
1
TC660
Circuit Description
The TC660 contains all the necessary circuitry to com-
plete a voltage inverter (Figure 1), with the exception of two
external capacitors, which may be inexpensive 150µF polar-
ized electrolytic capacitors. Operation is best understood by
considering Figure 2, which shows an idealized voltage
inverter. Capacitor C1 is charged to a voltage V+ for the half
cycle when switches S1 and S3 are closed. (Note: Switches
S2 and S4 are open during this half cycle.) During the second
half cycle of operation, switches S2 and S4 are closed, with
S1 and S3 open, thereby shifting capacitor C1 negatively by
V+ volts. Charge is then transferred from C1 to C2, such that
the voltage on C2 is exactly V+, assuming ideal switches and
no load on C2.
The four switches in Figure 2 are MOS power switches;
S1 is a P-channel device, and S2, S3 and S4 are N-channel
devices. The main difficulty with this approach is that in
integrating the switches, the substrates of S3 and S4 must
always remain reverse-biased with respect to their sources,
but not so much as to degrade their ON resistances. In
addition, at circuit start-up, and under output short circuit
conditions (VOUT = V+), the output voltage must be sensed
and the substrate bias adjusted accordingly. Failure to
accomplish this would result in high power losses and
possible device latch-up. This problem is eliminated in the
TC660 by a logic network which senses the output voltage
(VOUT) together with the level translators, and switches the
substrates of S3 and S4 to the correct level to maintain
necessary reverse bias.
To improve low-voltage operation, the “LV” pin should
be connected to GND, disabling the internal regulator. For
supply voltages greater than 3.0V, the LV terminal should
be left open to ensure latch-up-proof operation and prevent
device damage.
S1
V+
S3
GND
S2
2
C1
C2
S4
VOUT = – VIN
3
Figure 2. Idealized Switched Capacitor
Theoretical Power Efficiency
Considerations
4
In theory, a voltage multiplier can approach 100%
efficiency if certain conditions are met:
(1) The drive circuitry consumes minimal power.
(2) The output switches have extremely low ON
resistance and virtually no offset.
(3) The impedances of the pump and reservoir
5
capacitors are negligible at the pump frequency.
The TC660 approaches these conditions for negative
voltage multiplication if large values of C1 and C2 are used.
Energy is lost only in the transfer of charge between
capacitors if a change in voltage occurs. The energy lost
is defined by:
E = 1/2 C1 (V12 – V22)
6
V+
C1 +
150 µF
1
8
2
7
3 TC660 6
4
5
IS
V+
(+5V)
RL
IL
VOUT
V1 and V2 are the voltages on C1 during the pump and
transfer cycles. If the impedances of C1 and C2 are relatively
high at the pump frequency (refer to Figure 2) compared to
the value of RL, there will be a substantial difference in
voltages V1 and V2. Therefore, it is desirable not only to
7 make C2 as large as possible to eliminate output voltage
ripple, but also to employ a correspondingly large value for
C1 in order to achieve maximum efficiency of operation.
C2
+ 150 µF
Figure 1. TC660 Test Circuit (Inverter)
8
TELCOM SEMICONDUCTOR, INC.
4-9
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