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Part Name
Description
TK100F06K3 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
TK100F06K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
Toshiba
TK100F06K3 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
I
D
– V
DS
100
Common source 10
6.3
6
Tc
=
25°C
Pulse Test
6.5
80
7
8
5.8
60
5.6
40
5.4
20
VGS
=
5 V
0
0
0.2
0.4
0.6
0.8
1.0
Drain-source voltage VDS (V)
TK100F06K3
I
D
– V
DS
200
Common source 10
7
Tc
=
25°C
Pulse Test
8
160
6.5
6.3
120
80
40
0
0
6
5.8
5.6
VGS
=
5.4 V
0.4
0.8
1.2
1.6
2
Drain-source voltage VDS (V)
200
Common source
VDS
=
10 V
Pulse Test
160
I
D
– V
GS
120
80
100
25
Tc
= −
55°C
40
0
0
2
4
6
8
10
Gate-source voltage VGS (V)
V
DS
– V
GS
1
Common source
Tc
=
25°C
Pulse Test
0.8
0.6
0.4
ID
=
100 A
50
0.2
25
0
0
4
8
12
16
20
Gate-source voltage VGS (V)
1000
Common source
VDS
=
10 V
Pulse Test
|Y
fs
| – I
D
100
Tc
= −
55°C
100
25
10
1
1
10
100
1000
Drain current ID (A)
R
DS (ON)
– I
D
100
Common source
Tc
=
25°C
Pulse Test
10
VGS
=
10 V
1
1
10
100
1000
Drain current ID (A)
4
2009-04-17
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