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Part Name
Description
TK100F06K3 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
TK100F06K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
Toshiba
TK100F06K3 Datasheet PDF : 7 Pages
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TK100F06K3
r
th
– t
w
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
10
μ
100
μ
SINGLE PULSE
1m
10m
100m
Pulse width t
w
(s)
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
0.83°C/W
1
10
SAFE OPERATING AREA
1000
ID max (pulse)
*
100
ID max (continuous)
100
μ
s
*
1 ms
*
10
DC OPEATION
Tc
=
25°C
1
0.1
※
Single pulse Tc=25
℃
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
VDSS max
10
100
Drain-source voltage V
DS
(V)
E
AS
– T
ch
100
L
=
11uH
VDD
=
25V
IAR
=
100A
80
60
40
20
0
25
50
75 100 125 150 175 200
Channel temperature (initial) T
ch
(°C)
15 V
0V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
RG
=
25
Ω
V
DD
=
25 V, L
=
11
μ
H
Waveform
E
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
6
2009-04-17
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