ARF422 View Datasheet(PDF) - Power Semiconductors
Part Name
Description
Manufacturer
ARF422 Datasheet PDF : 2 Pages
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ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
TARGET SPECIFICATION
feb 97 - ISSUE : 02
ARF422
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
Conditions
V=VRRM
CONDUCTING
I F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current =1200 A
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
s
Softness (s-factor), min
V FR
Peak forward recovery
I F = 1000 A
di/dt= 60 A/µs
VR = 50 V
di/dt= 100 A/µs
MOUNTING
R th(j-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
ORDERING INFORMATION : ARF422 S 16
standard specification
VRRM/100
1600 V
940 A
14 kA
Tj
[°C] Value Unit
125 1600
V
125 1700
V
125 50
mA
940
A
930
A
125 14
kA
980 x1E3 A²s
125 1.57
V
125
1.20
V
125
0.350 mohm
3.5
µs
125 200
µC
120
A
0.5
125
5
V
37
°C/kW
-30 / 125 °C
11.8 / 13.2 kN
300
g
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