VN50300T View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
VN50300T Datasheet PDF : 4 Pages
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VN50300L/VN50300T
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-Resistanceb
Forward Transconductanceb
Common Source Output Conductanceb
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
gos
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 10 mA
VDS = 0 V, VGS = "20 V
TJ = 125_C
VDS = 250 V, VGS = 0 V
TJ = 125_C
VDS = 10 V, VGS = 10 V
VGS = 10 V, ID = 10 mA
VGS = 10 V, ID = 5 mA
TJ = 125_C
VDS = 15 V, ID = 10 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V
f = 1 MHz
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = 25 V, RL = 2.5 kW
ID ^ 10 mA, VGEN = 10 V
RG = 25 W
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
Min
500
1
15
5
Limits
Typa
Max
520
3.5
30
250
240
450
14
0.005
4.5
"100
"500
0.05
5
300
700
5
20
1.7
10
0.5
5
4.5
8
7
12
8
20
60
90
Unit
V
nA
mA
mA
W
mS
pF
ns
VNDO50
www.vishay.com
11-2
Document Number: 70216
S-04279—Rev. D, 16-Jul-01
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