DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

VNQ810M(2013) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
VNQ810M
(Rev.:2013)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
VNQ810M Datasheet PDF : 28 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
VNQ810M
Quad channel high side driver
Features
Type
RDS(on)
IOUT
VCC
VNQ810M 150m(1)
0.6A(1)
36V
t(s) 1. Per each channel.
uc CMOS compatible inputs
rod Open Drain status outputs
P On state open load detection
te Off state open load detection
le Shorted load protection
o Undervoltage and overvoltage shutdown
bs Loss of ground protection
O Very low standby current
) - Reverse battery protection(a)
Obsolete Product(s a. See Application schematic on page 18
SO-28 (double island)
Description
The VNQ810M is a quad HSD formed by
assembling two VND810M chips in the same SO-
28 package. The VND810M is a monolithic device
made using| STMicroelectronics VIPower M0-3
Technology. The VNQ830M is intended for driving
any type of multiple load with one side connected
to ground.
The Active VCC pin voltage clamp protects the
device against low energy spikes (see ISO7637
transient compatibility table). Active current
limitation combined with thermal shutdown and
automatic restart protects the device against
overload.
The current limitation threshold is aimed at
detecting the 21W/12V standard bulb as an
overload fault. The device detects the open load
condition in both the on and off state. In the off
state the device detects if the output is shorted to
VCC. The device automatically turns off in the
case where the ground pin becomes
disconnected.
Table 1. Device summary
Package
SO-28 (double island)
Tube
VNQ810M
Order codes
Tape and reel
VNQ810M13TR
September 2013
DocID7388 Rev 4
1/28
www.st.com
28

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]