VNQ830M(2003) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

VNQ830M
(Rev.:2003)

QUAD CHANNEL HIGH SIDE DRIVER

STMicroelectronics 

APPLICATION SCHEMATIC

+5V +5V

+5V

Rprot

STATUS1

VCC1,2

VCC3,4

Rprot

Rprot

Rprot

µC

Rprot

Rprot

Rprot

Rprot

INPUT1

STATUS2

INPUT2

STATUS3

INPUT3

STATUS4

INPUT4

+5V +5V

OUTPUT1

OUTPUT2

OUTPUT3

GND1,2

OUTPUT4

GND3,4

VGND

RGND

DGND

VNQ830M

Dld

Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.

GND PROTECTION NETWORK AGAINST

REVERSE BATTERY

Solution 1: Resistor in the ground line (RGND only). This

can be used with any type of load.

The following is an indication on how to dimension the

RGND resistor.

1) RGND ≤ 600mV / 2(IS(on)max).

2) RGND ≥ (−VCC) / (-IGND)

where -IGND is the DC reverse ground pin current and can

be found in the absolute maximum rating section of the

device’s datasheet.

Power Dissipation in RGND (when VCC<0: during reverse

battery situations) is:

PD= (-VCC)2/RGND

This resistor can be shared amongst several different

HSD. Please note that the value of this resistor should be

calculated with formula (1) where IS(on)max becomes the

sum of the maximum on-state currents of the different

devices.

Please note that if the microprocessor ground is not

common with the device ground then the RGND will

produce a shift (IS(on)max * RGND) in the input thresholds

and the status output values. This shift will vary

depending on how many devices are ON in the case of

several high side drivers sharing the same RGND.

If the calculated power dissipation leads to a large resistor

or several devices have to share the same resistor then

the ST suggests to utilize Solution 2.

9/20

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