Features
� 1.3A,600V,RDS(on)(Max 8.5Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 9.1nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
WFU1N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged
avalanche characteristics. This devices is specially well suited for high
efficiency switch mode power supply , electronic lamp ballasts based
on half bridge and UPS.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL
Maximum lead Temperature for soldering purposes
(Note1)
(Note2)
(Note1)
(Note3)
Value
600
1.3
0.84
5.0
±30
78
3.9
5.5
32
0.24
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
-
-
3.9
℃/W
0.5
-
-
℃/W
-
-
110
℃/W
Rev.A Dec.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.