ZXMN6A11D View Datasheet(PDF) - Zetex => Diodes

Part Name

Description

Manufacturer

ZXMN6A11D

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN6A11DN8

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

PARAMETER

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State

Resistance (1)

Forward Transconductance (3)

DYNAMIC (3)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate Charge

SYMBOL MIN. TYP.

V(BR)DSS 60

IDSS

IGSS

VGS(th)

1.0

RDS(on)

gfs

4.9

Ciss

330

Coss

35.0

Crss

17.0

td(on)

1.95

tr

3.5

td(off)

8.2

tf

4.6

Qg

3.0

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

5.7

Qgs

1.25

Qgd

0.86

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

0.85

Reverse Recovery Time (3)

trr

Reverse Recovery Charge (3)

Qrr

NOTES

(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

21.5

20.5

MAX. UNIT

CONDITIONS.

V ID=250µA, VGS=0V

1

␮A VDS=60V, VGS=0V

100

nA VGS=Ϯ20V, VDS=0V

V ID=250␮A, VDS= VGS

0.14

⍀ VGS=10V, ID=4.4A

0.25

⍀ VGS=4.5V, ID=3.8A

S VDS=15V,ID=2.5A

pF

pF

VDS=40 V, VGS=0V,

f=1MHz

pF

ns

ns

VDD =15V, ID=2.5A

RG=6.0⍀,VGS=10V

ns (refer to test circuit)

ns

nC VDS=15V, VGS=5V,

ID=2.5A

nC VDS=15V,VGS=10V,

nC

ID=2.5A

(refer to test circuit)

nC

0.95

V TJ=25°C, IS=2.8A,

VGS=0V

ns TJ=25°C, IF=2.5A,

nC di/dt= 100A/µs

ISSUE 1 - MARCH 2002

4

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