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ZXRE1004FFTA View Datasheet(PDF) - Diodes Incorporated.

Part Name
Description
Manufacturer
ZXRE1004FFTA
Diodes
Diodes Incorporated. Diodes
ZXRE1004FFTA Datasheet PDF : 5 Pages
1 2 3 4 5
A Product Line of
Diodes Incorporated
ZXRE1004
Absolute Maximum Ratings (Voltages to GND Unless Otherwise Stated)
Parameter
Rating
Unit
Reverse Current
30
mA
Forward Current
Operating Temperature
Storage Temperature
10
mA
-40 to 85
°C
-55 to 125
°C
Power Dissipation (TAMB = 25°C)
330
mW
SOT23
Electrical Characteristics (Test conditions: Tamb = 25°C, unless otherwise specified.)
Symbol
Parameter
Condition
VR
Reverse breakdown voltage
IMIN
Minimum knee current
IR
Recommended operating current
range
TC(*)
Average reverse breakdown voltage
temperature coefficient
ΔVR
Reverse breakdown voltage change
ΔIR
with current
ZR
Reverse dynamic impedance
EN
Wideband noise voltage
Notes:
(*) TC =
(VR(MAX) – VR(MIN)) x 1000000
VR x (T(MAX) – T(MIN))
IR = 100µA
IR(MIN) to IR(MAX)
IR=8µA to 1mA
IR=1mA to 20mA
IR = 1mA
f = 100Hz
IAC = 0.1IR
IR=8µA to 100µA
f=10Hz to 10kHz
Note: VR(MAX) - VR(MIN) is the maximum deviation in reference
voltage measured over the full operating temperature range.
(†) 0.5% SOT23 only
Min.
1.208
1.183
0.008
Typ.
1.22
1.22
4
20
0.2
60
Max.
1.232
1.257
8
20
75
1
10
0.6
.
Tol.
(%)
Unit
1
3
V
µA
mA
ppm/°C
mV
Ω
µV(rms)
ZXRE1004
Document number: DS32172 Rev. 4 - 2
2 of 5
www.diodes.com
June 2010
© Diodes Incorporated

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