BCW72LT1G(2009) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
BCW72LT1G Datasheet PDF : 7 Pages
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BCW72LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 2.0 mAdc, VEB = 0)
V(BR)CEO
45
Collector −Emitter Breakdown Voltage
(IC = 2.0 mAdc, VEB = 0)
V(BR)CES
45
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
50
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 100°C)
ICBO
−
−
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
hFE
200
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 50 mAdc, IB = 2.5 mAdc)
VCE(sat)
−
−
Base −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 2.5 mAdc)
VBE(sat)
−
Base −Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
0.6
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
−
Output Capacitance
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
Cobo
−
Input Capacitance
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
Cibo
−
Noise Figure
NF
(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
−
Typ
−
−
−
−
−
−
−
−
0.21
0.85
−
300
−
9.0
−
Max
−
−
−
−
100
10
450
0.25
−
−
0.75
−
4.0
−
10
Unit
Vdc
Vdc
Vdc
Vdc
nAdc
mAdc
−
Vdc
Vdc
Vdc
MHz
pF
pF
dB
EQUIVALENT SWITCHING TIME TEST CIRCUITS
300 ns
DUTY CYCLE = 2%
- 0.5 V
<1.0 ns
+ 3.0 V
+10.9 V
275
10 k
10 < t1 < 500 ms
t1
DUTY CYCLE = 2%
0
CS < 4.0 pF*
- 9.1 V
+10.9 V
10 k
< 1.0 ns 1N916
+ 3.0 V
275
CS < 4.0 pF*
Figure 1. Turn−On Time
*Total shunt capacitance of test jig and connectors
Figure 2. Turn−Off Time
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