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Part Name
Description
H5TC4G63 View Datasheet(PDF) - Hynix Semiconductor
Part Name
Description
Manufacturer
H5TC4G63
4Gb DDR3L SDRAM
Hynix Semiconductor
H5TC4G63 Datasheet PDF : 33 Pages
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DDR3L-1600 Speed Bins
For specific Notes See "Speed Bin Table Notes" on page 31.
Speed Bin
DDR3L-1600K
CL - nRCD - nRP
Parameter
Symbol
Internal read
command to first data
t
AA
ACT to internal read or
write delay time
t
RCD
PRE command period
t
RP
ACT to ACT or REF
command period
t
RC
ACT to PRE command
period
CL = 5
CL = 6
CWL = 5
CWL = 6, 7
CWL = 5
CWL = 6
CWL = 7
CWL = 5
t
RAS
t
CK(AVG)
t
CK(AVG)
t
CK(AVG)
t
CK(AVG)
t
CK(AVG)
t
CK(AVG)
CL = 7
CL = 8
CWL = 6
CWL = 7
CWL = 8
CWL = 5
CWL = 6
CWL = 7
CWL = 8
CWL = 5, 6
t
CK(AVG)
t
CK(AVG)
t
CK(AVG)
t
CK(AVG)
t
CK(AVG)
t
CK(AVG)
t
CK(AVG)
t
CK(AVG)
CL = 9 CWL = 7
t
CK(AVG)
CWL = 8
t
CK(AVG)
CWL = 5, 6
t
CK(AVG)
CL = 10 CWL = 7
t
CK(AVG)
CWL = 8
t
CK(AVG)
CL
=
11
CWL =
CWL
5, 6,7
=8
t
CK(AVG)
t
CK(AVG)
Supported CL Settings
Supported CWL Settings
min
13.75
(13.125)
8
13.75
(13.125)
8
13.75
(13.125)
8
48.75
(48.125)
8
11-11-11
max
20
—
—
—
35
9 * tREFI
3.0
3.3
Reserved
2.5
3.3
Reserved
Reserved
Reserved
1.875
< 2.5
(Optional)
5
Reserved
Reserved
Reserved
1.875
< 2.5
Reserved
Reserved
Reserved
1.5
<1.875
(Optional)
5
Reserved
Reserved
1.5
<1.875
Reserved
Reserved
1.25
<1.5
5, 6, (7), 8, (9), 10, 11
5, 6, 7, 8
Rev. 1.1 / June. 2013
Unit
Note
ns
ns
ns
ns
ns
ns
1, 2, 3, 4, 8, 10
ns
4
ns
1, 2, 3, 8
ns
1, 2, 3, 4, 8
ns
4
ns
4
ns
1, 2, 3, 4, 8
ns
1, 2, 3, 4, 8
ns
4
ns
4
ns
1, 2, 3, 8
ns
1, 2, 3, 4, 8
ns
1, 2, 3, 4
ns
4
ns
1, 2, 3, 4, 8
ns
1, 2, 3, 4
ns
4
ns
1, 2, 3, 8
ns
1, 2, 3, 4
ns
4
ns
1, 2, 3
n
CK
n
CK
30
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