2N708 View Datasheet(PDF) - Microsemi Corporation

Part Name

Description

Manufacturer

2N708

NPN SILICON SWITCHING TRANSISTOR

Microsemi Corporation 

2N708 JANTX SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS (3)

Forward-Current Transfer Ratio

IC = 0.5 mAdc, VCE = 1.0 Vdc

IC = 10 mAdc, VCE = 1.0 Vdc

Collector-Emitter Saturation Voltage

IC = 10 mAdc, IB = 1.0 mAdc

Base-Emitter Voltage

IC = 10 mAdc, IB = 1.0 mAdc

IC = 1.0 mAdc, IB = 0.1 mAdc

DYNAMIC CHARACTERISTICS

Small-Signal Short-Circuit Forward Current Transfer Ratio

IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHZ

Output Capacitance

VCB = 10 Vdc, IE = 0, f = 1.0 MHz

Input Capacitance

VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz

SWITCHING CHARACTERISTICS

Charge Storage Time

IC = IB1 = -IB21 = 10 mAdc

Turn-On Time

VBE ≈ -2.0 Vdc; IC ≈ 10 mAdc; IB1 ≈ 3.0 mAdc

Turn-Off Time

IC ≈ 10 mAdc; IB1 ≈ 3.0 mAdc, IB2 ≈ -1.0 mAdc

(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Symbol

hFE

VCE(sat)

VBE(sat)

hfe

Cobo

Cibo

ts

ton

toff

Min. Max. Unit

15

40

120

Vdc

0.40

0.80

Vdc

0.72

0.72

3.0

9.0

6.0

pƒ

9.0

pƒ

25

ηs

40

ηs

75

ηs

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

Share Link: