2SA2070(2004) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SA2070 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2070
High-Speed Switching Applications
DC-DC Converter Applications
2SA2070
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = -0.1 A)
• Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max)
• High-speed switching: tf = 70 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
VCBO
−50
V
VCEO
−50
V
VEBO
−7
V
IC
−1.0
A
ICP
−2.0
IB
−0.1
A
1.0
PC (Note)
W
2.0
Tj
150
°C
Tstg
−55 to 150
°C
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = −50 V, IE = 0
VEB = −7 V, IC = 0
IC = −10 mA, IB = 0
VCE = −2 V, IC = −0.1 A
VCE = −2 V, IC = −0.3 A
IC = −0.3 A, IB = −0.01 mA
IC = −0.3 A, IB = −0.01 mA
VCB = −10 V, IE = 0, f = 1 MHz
See Figure 1.
VCC ≈ −30 V, RL = 100 Ω
IB1 = −IB2 = −10 mA
Min Typ. Max Unit
―
― −100 nA
―
― −100 nA
−50 ―
―
V
200 ― 500
125 ―
―
―
― −0.20 V
―
― −1.10 V
―
8
―
pF
―
60
―
― 280 ―
ns
―
70
―
1
2004-07-07
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