2SC4391 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SC4391 Datasheet PDF : 2 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4391
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SA1674
/ ■ Features
• Low collector-emitter saturation voltage VCE(sat)
e . • High collector-emitter voltage (Base open) VCEO
ge • Allowing supply with the radial taping
nc d le sta ■ Absolute Maximum Ratings Ta = 25°C
yc Parameter
Symbol Rating
Unit
a e lifec Collector-base voltage (Emitter open) VCBO
80
V
ct Collector-emitter voltage (Base open) VCEO
80
V
n u du Emitter-base voltage (Collector open) VEBO
5
V
ro Collector current
IC
1
A
te tin r P Peakcollectorcurrent
ICP
1.5
A
fou e n. Collector power dissipation *
PC
1
W
ing typ tio Junction temperature
Tj
150
°C
in n llow nce e ed rma Storage temperature
Tstg −55 to +150 °C
s fo na typ typ info n/ Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
6.9±0.1
0.7 4.0
0.65 max.
Unit: mm
2.5±0.1
(0.8)
0.45+–00..0150
2.5±0.5
1.05±0.05
2.5±0.5
0.45+–00..0150
123
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
a oincludemaintenancetinued type latest .co.jp/e ■ Electrical Characteristics Ta = 25°C ± 3°C
c ed ned inte on ed ut nic Parameter
Symbol
Conditions
Min
M is tinu pla ma disc tinu bo so Collector-base voltage (Emitter open)
n L a na Collector-emitter voltage (Base open)
iscon laned isco UR .pa Emitter-base voltage (Collector open)
d g on Collector-base cutoff current (Emitter open)
e/D p win ic Forward current transfer ratio
Dnanc it follo w.sem Collector-emitter saturation voltage *1
ainte e vis ://ww Base-emitter saturation voltage *1
Transition frequency
M as ttp Collector output capacitance
Ple h (Common base, input open circuited)
VCBO
VCEO
VEBO
ICBO
hFE1 *2
hFE2 *1
VCE(sat)
VBE(sat)
fT
Cob
IC = 10 µA, IE = 0
80
IC = 1 mA, IB = 0
80
IE = 10 µA, IC = 0
5
VCB = 40 V, IE = 0
VCE = 2 V, IC = 100 mA
120
VCE = 2 V, IC = 500 mA
60
IC = 500 mA, IB = 50 mA
IC = 500 mA, IB = 50 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Typ Max
0.1
340
0.15 0.30
0.85 1.20
120
10 20
Unit
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
120 to 240 170 to 340
Publication date: February 2003
SJC00154BED
1
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