2SD2620 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SD2620 Datasheet PDF : 3 Pages
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Transistors
2SD2620J
Silicon NPN epitaxial planar type
For low-frequency driver amplification
■ Features
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• High emitter-base voltage (Collector open) VEBO
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
100
V
Collector-emitter voltage (Base open) VCEO
100
V
Emitter-base voltage (Collector open) VEBO
15
V
Collector current
IC
20
mA
Peak collector current
ICP
50
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg −55 to +125 °C
1.60+–00..0035
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5˚
Unit: mm
0.12+–00..0013
1 : Base
2 : Emitter
3 : Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: 3B
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
100
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
100
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
15
Collector-base cutoff current (Emitter open) ICBO VCB = 60 V, IE = 0
Collector-emitter cutoff current (Base open) ICEO VCE = 60 V, IB = 0
Forward current transfer ratio
hFE VCE = 10 V, IC = 2 mA
400
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
Noise voltage
NV VCE = 10 V, IC = 1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
0.1
1.0
1 200
0.05 0.20
200
80
V
V
V
µA
µA
V
MHz
mV
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJC00270CED
1
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