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2SK3541T2R View Datasheet(PDF) - ROHM Semiconductor

Part Name
Description
Manufacturer
2SK3541T2R
ROHM
ROHM Semiconductor ROHM
2SK3541T2R Datasheet PDF : 5 Pages
1 2 3 4 5
Transistor
Small switching (30V, 0.1A)
2SK3541
2SK3541
!Applications
Interfacing, switching (30V, 100mA)
!Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Easily designed drive circuits.
5) Easy to parallel.
!Structure
Silicon N-channel
MOSFET
!External dimensions (Units : mm)
1.2
0.2 0.8 0.2
(2)
(3)
(1)
0.15Max.
ROHM : VMT3
Abbreviated symbol : KN
(1) Gate
(2) Source
(3) Drain
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
Continuous
ID
100
mA
Drain current
Pulsed
IDP1
400
mA
Reverse drain
Continuous
IDR
100
mA
current
Pulsed
IDRP1
400
mA
Total power dissipation (Tc=25°C)
PD2
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55~+150
°C
1 Pw10µs, Duty cycle<1%
2 With each pin mounted on the recommended lands.
!Equivalent circuit
Drain
Gate
Gate
Protection
Diode
Source
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.

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