K3673 View Datasheet(PDF) - Fuji Electric
Part Name
Description
Manufacturer
K3673 Datasheet PDF : 4 Pages
| |||
2SK3673-01MR
Characteristics
Allowable Power Dissipation
PD=f(Tc)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Tc [°C]
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
16
20V 10V
8.0V
7.0V
12
6.5V
8
6.0V
4
VGS=5.5V
0
0
5
10
15
20
25
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
10
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
1
0.1
1
10
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
2.00
VGS=5.5V
6.0V
6.5V
1.75
1.50
1.25
7.0V
8.0V
10V
20V
1.00
0.75
0
4
8
12
16
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
4.0
3.5
3.0
2.5
2.0
max.
1.5
typ.
1.0
0.5
0.0
-50 -25 0
25 50 75 100 125 150
Tch [°C]
2
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