DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2STF2220(2006) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
2STF2220
(Rev.:2006)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
2STF2220 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Electrical characteristics
2
Electrical characteristics
2STF2220
(Tcase = 25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test Conditions
ICBO
Collector cut-off current
(IE =0)
VCB = -20V
IEBO
Emitter cut-off current
(IC =0)
VEB = -5V
V(BR)CEO (2)
Collector-emitter
breakdown voltage
(IB = 0)
IC = -10mA
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = -100µA
VCE(sat) (2) Collector-emitter
saturation voltage
IC = -0.5A
IC = -1.5A
IB = -50mA
IB = -150mA
VBE(sat) (2)
Base-emitter saturation
voltage
IC = -0.5A
IC = -1.5A
IB = -50mA
IB = -150mA
VBE(on) (2) Base-emitter on voltage IC = -1A
VCE = -2V
hFE (2) DC current gain
IC = -100mA
IC = -500mA
IC = -1.5A
IC = -3A
VCE = -2V
VCE = -2V
VCE = -2V
VCE = -2V
CCBO
Collector-base
capacitance
IE = 0 VCB = -10V
f = 1MHz
Resistive load
ton
Turn-on time
toff
Turn-off time
IC = -1.5A VCC = -10V
IB1 = -IB2 = -150mA
Min. Typ. Max. Unit
-0.1 µA
-0.1 µA
-20
V
-5
V
-0.25 V
-0.45 V
-1
V
-1.1 V
-1
V
200
600
170
120
75
30
pF
60
ns
250
ns
Note (2) Pulsed duration = 300 µs, duty cycle 1.5%
4/11

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]