2STC5200 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
2STC5200 Datasheet PDF : 9 Pages
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2STC5200
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
ICBO
Collector cut-off current
(IE = 0)
VCB = 230 V
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
V(BR)CEO(1)
Collector-emitter breakdown
voltage (IB = 0)
IC = 50 mA
Collector-base breakdown
V(BR)CBO voltage (IE = 0)
IC = 100 µA
V(BR)EBO(1)
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
VCE(sat)(1)
Collector-emitter saturation
voltage
IC = 8 A
IB = 800 mA
VBE Base-emitter voltage
IC = 7 A VCE = 5 V
hFE
DC current gain
IC = 1 A
IC = 7 A
VCE = 5 V
VCE = 5 V
Resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
fT
Transition frequency
VCC = 60 V IC = 5A
IB1= -IB2 = 0.5 A
IC = 1 A VCE = 5 V
CCBO
Collector-base capacitance
(IE = 0)
VCB = 10 V f = 1 MHz
1. Pulsed: pulse duration = 300 µs, duty cycle < 1.5%
Min. Typ. Max. Unit
5 µA
5 µA
230
V
230
V
5
V
3
V
1.5 V
80
160
35
0.24
µs
4.7
µs
0.6
µs
30
MHz
150
pF
3/9
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