5STP45Q2200 View Datasheet(PDF) - ABB

Part Name

Description

Manufacturer

5STP45Q2200

Phase Control Thyristor

ABB 

5STP 45Q2800

On-state

ITAVM

Max. average on-state current

5490 A Half sine wave, TC = 70°C

ITRMS

ITSM

Max. RMS on-state current

Max. peak non-repetitive

8625 A

75000 A

tp =

10 ms

surge current

I2t

Limiting load integral

79000 A

tp =

28125 kA2s tp =

25900 kA2s tp =

8.3 ms

10 ms

8.3 ms

VT

On-state voltage

1.29 V

IT =

6000 A

VT0

Threshold voltage

rT

Slope resistance

0.86 V

0.070 mΩ

IT = 3000 - 9000 A

IH

Holding current

40-100 mA

20-75 mA

Tj = 25°C

Tj = 125°C

IL

Latching current

100-500 mA Tj = 25°C

150-350 mA Tj = 125°C

Tj = 125°C

After surge:

VD = VR = 0V

Tj = 125°C

Switching

di/dtcrit Critical rate of rise of on-state

current

td

Delay time

tq

Turn-off time

Qrr

Recovery charge

min

max

250 A/µs Cont.

VD ≤ 0.67⋅VDRM Tj = 125°C

500 A/µs 60 sec.

ITRM = 3000 A f = 50 Hz

IFG =

2.0 A tr = 0.5 µs

≤ 3.0 µs VD = 0.4⋅VDRM IFG =

2.0 A tr = 0.5 µs

≤ 400 µs VD ≤ 0.67⋅VDRM ITRM = 3000 A Tj = 125°C

dvD/dt = 20V/µs VR > 200 V

4200 µAs

diT/dt = -5 A/µs

6500 µAs

Triggering

VGT

Gate trigger voltage

IGT

Gate trigger current

VGD

Gate non-trigger voltage

IGD

Gate non-trigger current

VFGM

Peak forward gate voltage

IFGM

Peak forward gate current

VRGM

Peak reverse gate voltage

PG

Maximum gate power loss

2.6 V Tj = 25°C

400 mA Tj = 25°C

0.3 V

VD = 0.4⋅VDRM

10 mA VD = 0.4⋅VDRM

12 V

10 A

10 V

3W

ABB Semiconductors AG reserves the right to change specifications without notice.

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Doc. No. 5SYA1050-01 Sep.00

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