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7WB383(2014) View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
7WB383
(Rev.:2014)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
7WB383 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
7WB383
DC ELECTRICAL CHARACTERISTICS
Symbol
VIK
VIH
Parameter
Clamp Diode Voltage
High−Level Input Voltage
(Control)
Conditions
II/O = −18 mA
VCC
(V)
4.5
4.0 to
5.5
TA = 255C
Min Typ Max
−1.2
2.0
TA =
−555C to +1255C
Min
Max
Unit
−1.2
V
2.0
V
VIL
Low−Level Input Voltage
(Control)
4.0 to
5.5
0.8
0.8
V
VOH
Output Voltage High
See Figure 4
IIN
Input Leakage Current
0 v VIN v 5.5 V
5.5
$0.1
$1.0
mA
IOFF
Power Off Leakage Current
VI/O = 0 to 5.5 V
0
$0.1
$1.0
mA
ICC
Quiescent Supply Current
IO = 0,
5.5
VIN = VCC or 0 V
$0.1
$1.0
mA
DICC
Increase in Supply Current
(Control Pin)
One input at 3.4 V; 5.5
Other inputs at
VCC or GND
2.5
mA
RON
Switch ON Resistance
VI/O = 0,
4.5
II/O = 64 mA
II/O = 30 mA
3
7
3
7
W
7
7
VI/O = 2.4,
II/O = 15 mA
6
15
15
VI/O = 2.4,
4.0
II/O = 15 mA
10
20
20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS
Symbol
tPD
Parameter
Propagation Delay, Bus to Bus
Test Condition
See Figure 5
TA =
VCC
TA = 25 5C
−555C to +1255C
(V)
Min Typ Max
Min
Max
Unit
4.0 to
5.5
0.25
0.25
ns
tPD−EX Propagation Delay, EX to Bus
See Figure 5 and
Figure 6
4.0 to
5.5
4.5
4.5
ns
tEN
Output Enable Time
See Figure 5
4.5 to 0.8 2.5 4.2
0.8
4.2
ns
5.5
4.0
0.8 3.0 4.6
0.8
4.6
tDIS
Output Disable Time
4.5 to 0.8 3.0 4.8
0.8
4.8
ns
5.5
4.0
0.8 2.9 4.4
0.8
4.4
CIN
Control Input Capacitance
VIN = 5 or 0 V
5.0
2.5
pF
CIO(ON) Switch On Capacitance
Switch ON
5.0
10
pF
CIO(OFF) Switch Off Capacitance
Switch OFF
5.0
5
pF
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