16N03L View Datasheet(PDF) - Intersil
Part Name
Description
Manufacturer
16N03L Datasheet PDF : 8 Pages
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RFD16N03L, RFD16N03LSM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFD16N03L, RFD16N03LSM
30
30
±10
16
Refer to Peak Current Curve
Figures 6, 16, 17
90
0.606
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1. TJ = 25oC to 150oC.
LC-
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
SYMBOL
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
TEST CONDITIONS
ID = 250µA, VGS = 0V (Figure 13)
VGS = VDS, ID = 250µA (Figure 12)
VDS = 30V,
VGS = 0V
TC = 25oC
TC = 150oC
VGS = ±10V
ID = 16A, VGS = 5V (Figure 11)
VDD = 15V, ID ≈ 16A,
RL = 0.93Ω, VGS = 5V,
RGS = 5Ω
(Figures 18, 19)
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 24V,
ID = 16A,
RL = 1.5Ω
IG(REF) = 0.6mA
(Figures 15, 20, 21
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
CISS
COSS
CRSS
RθJC
RθJA
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 14)
Figure 3
TO-251 and TO-252
Source to Drain Diode Specifications
MIN TYP MAX UNITS
30
-
-
V
1
-
2
V
-
-
1
µA
-
-
50
µA
-
-
±100
nA
-
-
0.025
Ω
-
-
120
ns
-
15
-
ns
-
95
-
ns
-
25
-
ns
-
27
-
ns
-
-
80
ns
-
50
60
nC
-
30
36
nC
-
1.5
1.8
nC
-
1650
-
pF
-
575
-
pF
-
200
-
pF
-
-
1.65
oC/W
-
-
100
oC/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
Source to Drain Diode Voltage
VSD
ISD = 16A
-
-
Diode Reverse Recovery Time
trr
ISD = 16A, dISD/dt = 100A/µs
-
-
NOTES:
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
MAX
1.5
75
UNITS
V
ns
6-157
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