AON6500 View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

AON6500

30V N-Channel AlphaMOS

Unspecified 

AON6500

30V N-Channel AlphaMOS

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

30

IDSS

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V

TJ=55°C

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20V

VGS(th) Gate Threshold Voltage

VDS=VGS, ID=250µA

1

VGS=10V, ID=20A

RDS(ON) Static Drain-Source On-Resistance

TJ=125°C

VGS=4.5V, ID=20A

gFS

Forward Transconductance

VDS=5V, ID=20A

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

V

1

µA

5

100 nA

1.4

2

V

0.75 0.95

mΩ

1.1 1.4

1

1.3 mΩ

100

S

0.7

1

V

100 A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

7036

pF

2778

pF

353

pF

0.5 1.1

1.7

Ω

SWITCHING PARAMETERS

Qg(10V)

Qg(4.5V)

Qgs

Qgd

tD(on)

tr

tD(off)

tf

trr

Qrr

Total Gate Charge

Total Gate Charge

Gate Source Charge

VGS=10V, VDS=15V, ID=20A

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=0.75Ω,

RGEN=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs

107 145 nC

49.7 68 nC

11.7

nC

21.4

nC

12.3

ns

12.8

ns

68.5

ns

28.8

ns

31

ns

106

nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Single pulse width limited by junction temperature TJ(MAX)=150°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

2/6

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