BTS612N1 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BTS612N1

Smart Two Channel Highside Power Switch

Infineon Technologies 

Parameter and Conditions, each channel

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

Symbol

BTS612N1

Values

Unit

min typ max

Operating Parameters

Operating voltage6)

Tj =-40...+150°C: Vbb(on)

5.0

-- 34 V

Undervoltage shutdown

Tj =-40...+150°C: Vbb(under)

3.5

-- 5.0 V

Undervoltage restart

Tj =-40...+25°C: Vbb(u rst)

Tj =+150°C:

--

-- 5.0 V

7.0

Undervoltage restart of charge pump

see diagram page 12

Vbb(ucp)

-- 5.6 7.0 V

Undervoltage hysteresis

∆Vbb(under) = Vbb(u rst) - Vbb(under)

∆Vbb(under)

-- 0.2

-- V

Overvoltage shutdown

Tj =-40...+150°C: Vbb(over)

34

-- 43 V

Overvoltage restart

Tj =-40...+150°C: Vbb(o rst)

33

--

-- V

Overvoltage hysteresis

Overvoltage protection7)

Tj =-40...+150°C: ∆Vbb(over)

Tj =-40...+150°C: Vbb(AZ)

-- 0.5

42 47

-- V

-- V

Ibb=40 mA

Standby current (pin 4),

VIN=0

Ibb(off)

Tj=-40...+150°C:

µA

-- 90 150

Operating current (Pin 2)8), VIN=5 V

both channels on, Tj =-40...+150°C,

Operating current (Pin 2)8)

one channel on, Tj =-40...+150°C:,

IGND

IGND

-- 0.6 1.2 mA

-- 0.4 0.7 mA

6) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V

7) See also VON(CL) in table of protection functions and circuit diagram page 8.

8) Add IST, if IST > 0, add IIN, if VIN>5.5 V

Semiconductor Group

4

2003-Oct-01

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