BTS612N1 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BTS612N1

Smart Two Channel Highside Power Switch

Infineon Technologies 

Parameter and Conditions, each channel

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

Symbol

Protection Functions9)

Initial peak short circuit current limit (pin 4 to 1

or 7)

Tj =-40°C:

Tj =25°C:

Tj =+150°C:

Repetitive short circuit shutdown current limit

Tj = Tjt (see timing diagrams, page 11)

Output clamp (inductive load switch off)

at VOUT = Vbb - VON(CL)

IL= 40 mA:

Thermal overload trip temperature

Thermal hysteresis

Reverse battery (pin 4 to 2) 10)

Reverse battery voltage drop (Vout > Vbb)

IL = -1.9 A, each channel

Tj=150 °C:

IL(SCp)

IL(SCr)

VON(CL)

Tjt

∆Tjt

-Vbb

-VON(rev)

BTS612N1

Values

Unit

min typ max

5.5 9.5

4.5 7.5

2.5 4.5

--

4

41 47

150

--

-- 10

--

--

-- 610

13 A

11

7

-- A

53 V

-- °C

-- K

32 V

-- mV

Diagnostic Characteristics

Open load detection current

(included in standby current Ibb(off))

Open load detection voltage

IL(off)

Tj=-40..150°C: VOUT(OL)

-- 30

2

3

-- µA

4V

9) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not

designed for continuous repetitive operation.

10) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal

operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature

protection is not active during reverse current operation! Input and Status currents have to be limited (see

max. ratings page 2 and circuit page 8).

Semiconductor Group

5

2003-Oct-01

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