BTS612N1 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BTS612N1 Datasheet PDF : 15 Pages
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BTS612N1
Truth Table
IN1 IN2 OUT1 OUT2
ST
ST
BTS611L1 BTS612N1
Normal operation
Open load
L
L
L
L
H
H
L
H
L
H
H
H
H
L
H
L
H
H
H
H
H
H
H
H
Channel 1
L
L
Z
L
H(L12))
L
L
H
Z
H
H
H
H
X
H
X
L
H
Channel 2
L
L
L
Z
H(L12))
L
H
L
H
Z
H
H
X
H
X
H
L
H
Short circuit to Vbb
Channel 1
L
L
H
L
L13)
L
L
H
H
H
H
H
H
X
H
X
H(L14))
H
Channel 2
L
L
L
H
L13)
L
H
L
H
H
H
H
X
H
X
H
H(L14))
H
Overtemperature
both channel
L
L
L
L
H
H
X
H
L
L
L
L
H
X
L
L
L
L
Channel 1
L
X
L
X
H
H
H
X
L
X
L
L
Channel 2
X
L
X
L
H
H
X
H
X
L
L
L
Undervoltage/ Overvoltage
X
X
L
L
H
H
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 12)
Terms
Input circuit (ESD protection)
Vbb
I IN1
3 IN1
Ibb
4
Vbb
1
I IN2
OUT1
6 IN2
I ST
VIN1 VIN2 VST 5 ST
PROFET
GND
2
OUT2
7
R GND
IGND
VON1
VON2
I L1
I L2
VOUT1
V OUT2
IN
RI
ESD-ZD I
II
GND
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
12) With additional external pull up resistor
13) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
14) Low resistance to Vbb may be detected in the ON-state by the no-load-detection
Semiconductor Group
7
2003-Oct-01
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