BTS7741G View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BTS7741G

Trilith IC

Infineon Technologies 

BTS 7741 G

3.3 Electrical Characteristics (cont’d)

ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V

unless otherwise specified

Parameter

Symbol Limit Values Unit Test Condition

min. typ. max.

Output stages

Inverse diode of high-side VFH

–

switch; Forward-voltage

Inverse diode of low-side VFL

–

switch; Forward-voltage

Static drain-source

R – DS ON H

on-resistance of high-side

switch

Static drain-source

on-resistance of low-side

switch

R – DS ON L

Static path on-resistance RDS ON –

0.8 1.2 V IFH = 3 A

0.8 1.2 V IFL = 3 A

110 140 mΩ ISH = 1 A

Tj = 25 °C

100 120 mΩ ISL = 1 A;

VGL = 5 V

Tj = 25 °C

–

500

mΩ

R + R DS ON H

DS ON L

ISH = 1 A;

Short Circuit of high-side switch to GND

Initial peak SC current

ISCP H

9

8

6

11 14 A Tj = – 40 °C

10 13 A Tj = + 25 °C

8

10 A Tj = + 150 °C

Short Circuit of high-side switch to VS

Output pull-down-resistor RO

12 22 50 kΩ VDSL = 3 V

Short Circuit of low-side switch to VS

Initial peak SC current

ISCP L

14 17 22 A

Tj = – 40 °C

12 15 20 A Tj = 25 °C

8.5 10 15 A Tj = 150 °C

Note: Integrated protection functions are designed to prevent IC destruction under fault conditions. Protection

functions are not designed for continuous or repetitive operation.

Data Sheet

10

2003-03-06

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