HYB3164400T-60 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

HYB3164400T-60

16M x 4-Bit Dynamic RAM (4k & 8k Refresh)

Siemens AG 

HYB 3164(5)400J/T-50/-60

16M x 4-DRAM

AC Characteristics (cont’d)(note: 6,7,8)

TA = 0 to 70 ˚C,VCC = 3.3 ± 0.3 V

Parameter

Symbol

HYB

3164(5)400

J/T-50

min. max.

CAS precharge to RAS Delay

tRHCP

30

–

HYB

3164(5)400

J/T-60

min. max.

35

–

Unit Note

ns

Fast Page Mode Read-Modify-Write

Cycle

Fast page mode read-write cycle time tPRWC

71

–

80

–

ns

CAS precharge to WE

tCPWD

48

–

55

–

ns

CAS-before-RAS refresh cycle

CAS setup time

tCSR

5

–

5

–

ns

CAS hold time

tCHR

10

–

10

–

ns

RAS to CAS precharge time

tRPC

5

–

5

–

ns

Write to RAS precharge time

tWRP

10

–

10

–

ns

Write hold time referenced to RAS

tWRH

10

–

10

–

ns

CAS-before-RAS counter test cycle

CAS precharge time

tCPT

25

–

30

–

ns

Test mode cycle

Write command setup time

Write command hold time

tWTS

10

–

10

–

ns

tWTH

10

–

10

–

ns

Self Refresh Cycle

RAS pulse width

RAS precharge time

CAS hold time

tRASS

tRPS

tCHS

100k –

90

–

-50 –

100k –

110 –

-50 –

ns 17

17

ns 17

Semiconductor Group

71

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