HYB3164400T-60 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
HYB3164400T-60 Datasheet PDF : 28 Pages
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HYB 3164(5)400J/T-50/-60
16M x 4-DRAM
AC Characteristics (note: 6,7,8)
TA = 0 to 70 ˚C,VCC = 3.3 ± 0.3 V
Parameter
common parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period for HYB3164400
Refresh period for HYB3165400
Symbol
HYB
3164(5)400
J/T-50
min. max.
HYB
3164(5)400
J/T-60
min. max.
Unit Note
tRC
90
–
110 –
ns
tRP
30
–
40
–
ns
tRAS
50
100k 60
100k ns
tCAS
13
100k 15
100k ns
tASR
0
–
0
–
ns
tRAH
8
–
10
–
ns
tASC
0
–
0
–
ns
tCAH
10
–
10
–
ns
tRCD
18
37
20
45
tRAD
13
25
15
30
ns
tRSH
13
–
15
–
ns
tCSH
50
–
60
–
ns
tCRP
5
–
5
–
ns
tT
3
30
3
30
ns 7
tREF
–
128 –
128 ms
tREF
–
64
–
64
ms
Read Cycle
Access time from RAS
tRAC
Access time from CAS
tCAC
Access time from column address
tAA
OE access time
tOEA
Column address to RAS lead time
tRAL
Read command setup time
tRCS
Read command hold time
tRCH
Read command hold time referenced tRRH
to RAS
–
50
–
60
ns 8, 9
–
13
–
15
ns 8, 9
–
25
–
30
ns 8, 10
–
13
–
15
ns 8
25
–
30
–
ns
0
–
0
–
ns
0
–
0
–
ns 11
0
–
0
–
ns 11
Semiconductor Group
69
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