DTC643TK View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
DTC643TK Datasheet PDF : 3 Pages
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Transistors
DTC643TU / DTC643TK
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 20 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 20 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 12 −
−
V IE=50µA
Collector cutoff current
ICBO
−
− 0.5 µA VCB=20V
Emitter cutoff current
IEBO
−
− 0.5 µA VEB=12V
Collector-emitter saturation voltage VCE (sat) − 40 150 mV IC / IB=50mA / 2.5mA
DC current transfer ratio
hFE 820 − 2700 − VCE=5V, IC=50mA
Input resistance
Transition frequency
R1 3.29 4.7 6.11 kΩ
−
fT
− 150 − MHz VCE=10V, IE= −50mA, f=100MHz ∗
Output "ON" resistance
Ron
− 0.55 − Ω VI=5V, RL=1kΩ, f=1MHz
∗Transition frequency of the device.
!Packaging specifications and hFE
Package
Type
Packaging type
Code
Basic ordering unit (pieces)
DTC643TU
DTC643TK
UMT3
Taping
T106
3000
−
SMT3
Taping
T146
3000
−
!Electrical characteristic curves
10000
VCE=5V
1000
100°C
25°C
−40°C
100
0.1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.1 DC Current Gain vs.
Collector Current
10000
IC / IB=20 / 1
1000
1000
100
Ta=25°C
f=1kHz
RL=1kΩ
hFE=1500 (5V / 50mA)
100
100°C
10
−40°C
25°C
1
0.1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.2 Collector-Emitter Saturation
Voltage vs. Collector Current
10
1
0.1
0.1
1
10
100
INPUT VOLTAGE : VI (V)
Fig.3 "ON" resistance vs. Input Voltage
!Ron measurement circuit
RL=1kΩ
Ron=
v0
vi−v0
×RL
Input
vi
100mV
(rms)
f=1kHz
V
Output
v0
vI
Fig.4 Output "ON" resistance (Ron)
measurement circuit
2/2
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