DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

GP2S40J0000F View Datasheet(PDF) - Sharp Electronics

Part Name
Description
Manufacturer
GP2S40J0000F Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Absolute Maximum Ratings
Parameter
Forward current
Input Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Output
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
1Soldering temperature
1 For 5s
Symbol
IF
VR
PD
VCEO
VECO
IC
PC
Ptot
Topr
Tstg
Tsol
(Ta=25˚C)
Rating
Unit
50
mA
6
V
75
mW
35
V
6
V
20
mA
75
mW
100
mW
25 to +85 ˚C
40 to +100 ˚C
260
˚C
Soldering area
GP2S40J0000F
Electro-optical Characteristics
Parameter
Symbol
Forward voltage
Input
VF
Reverse current
IR
Output
Transfer
charac-
teristics
Collector dark current
2 Collector Current
3 Leak current
Response time
Rise time
Fall time
ICEO
IC
ILEAK
tr
tf
2 The condition and arrangement of the reective object are shown below.
3 No reective object
Condition
IF=20mA
VR=3V
VCE=20V
IF=20mA, VCE=5V
IF=20mA, VCE=5V
VCE=2V, IC=100μA,
RL=1kΩ, d=4mm
Test Arrangement for Collector Current
Al evaporation
d=4mm glass plate
MIN.
0.5
TYP.
1.2
1
50
50
(Ta=25˚C)
MAX. Unit
1.4
V
10
μA
100 nA
3
mA
500 nA
150
150
μs
Sheet No.: D3-A02001EN
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]