HL8325G View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

HL8325G

GaAlAs Laser Diode

Hitachi -> Renesas Electronics 

HL8325G

GaAlAs Laser Diode

Description

The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well)

structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It

is suitable as a light source for optical disk memories, card readers and various other types of optical

equipment.

Features

• Infrared light output: λp = 820 to 840 nm

• High power: standard continuous operation at 40 mW (CW), pulsed operation at 50 mW

• Built-in monitor photodiode

• Single longitudinal mode

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