IRLR024NPBF View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRLR024NPBF

HEXFET® Power MOSFET

International Rectifier 

IRLR/U024NPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

gfs

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LD

LS

Ciss

Coss

Crss

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

55 ––– ––– V VGS = 0V, ID = 250µA

––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 0.065

VGS = 10V, ID = 10A „

––– ––– 0.080 Ω VGS = 5.0V, ID = 10A „

––– ––– 0.110

VGS = 4.0V, ID = 9.0A „

1.0 ––– 2.0 V VDS = VGS, ID = 250µA

8.3 ––– ––– S VDS = 25V, ID = 11A

––– ––– 25

––– ––– 250

µA VDS = 55V, VGS = 0V

VDS = 44V, VGS = 0V, TJ = 150°C

––– ––– 100 nA VGS = 16V

––– ––– -100

VGS = -16V

––– ––– 15

ID = 11A

––– ––– 3.7

––– ––– 8.5

nC VDS = 44V

VGS = 5.0V, See Fig. 6 and 13 „†

––– 7.1 –––

VDD = 28V

––– 74 ––– ns ID = 11A

––– 20 –––

RG = 12Ω, VGS = 5.0V

––– 29 –––

RD = 2.4Ω, See Fig. 10 „†

Between lead,

D

––– 4.5 ––– nH 6mm (0.25in.)

––– 7.5 –––

from package

G

and center of die contact

S

––– 480 –––

VGS = 0V

––– 130 ––– pF VDS = 25V

––– 61 –––

ƒ = 1.0MHz, See Fig. 5†

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

‚ VDD = 25V, starting TJ = 25°C, L = 790µH

RG = 25Ω, IAS = 11A. (See Figure 12)

ƒ ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

2

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 17

A showing the

integral reverse

G

––– ––– 72

p-n junction diode.

S

––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V „

––– 60 90 ns TJ = 25°C, IF = 11A

––– 130 200 nC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… This is applied for I-PAK, LS of D-PAK is measured between

lead and center of die contact

† Uses IRLZ24N data and test conditions.

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