KDS2572 View Datasheet(PDF) - TY Semiconductor
Part Name
Description
Manufacturer
KDS2572 Datasheet PDF : 2 Pages
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SSMMDD TTyyppee
MOSFIECICT
Product specification
KDS2572
Electrical Characteristics Ta = 25
Parameter
Drain to Source Breakdown Voltage
Symbol
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain "Miller" Charge
Gate Charge Threshold to Plateau
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
IGSS
VGS(TH)
rDS(ON)
rDS(ON)
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgd
Qgs2
tON
td(ON)
tr
td(OFF)
tf
tOFF
Source to Drain Diode Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovered Charge
QRR
Testconditons
ID = 250mA, VGS = 0V
VDS = 120V,VGS = 0V
VDS = 120V,VGS = 0V ,TC = 150
VGS = 20V
VGS = VDS, ID = 250mA
ID = 4.9A, VGS = 10V
ID = 4.9A, VGS = 6V
VDS = 25V, VGS = 0V,f = 1MHz
VGS=0V to 10V,VDD=75V,ID=4.9A,Ig=1.0mA
VGS=0V to 2V,VDD=75V,ID=4.9A,Ig=1.0mA
VDD = 75V,ID = 4.9A,Ig = 1.0mA
VDD = 75V, ID = 4.9A,VGS = 10V, RG = 10
ISD = 4.9A
ISD = 3.1A
ISD = 4.9A, dISD/dt =100A/ s
ISD = 4.9, dISD/dt =100A/ s
Min Typ Max Unit
150
V
1
A
100 nA
2
4
V
0.040 0.047
0.044 0.053
2050
pF
220
pF
48
pF
29 38 nC
4
6 nC
8
nC
6
nC
4
nC
27 ns
14
ns
4
ns
44
ns
22
ns
100 ns
1.25 V
1.0 V
72 ns
158 nC
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4008-318-123
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