DIM200MHS17-A000 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

Manufacturer

DIM200MHS17-A000

Half Bridge IGBT Module

Dynex Semiconductor 

DIM200MHS17-A000

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions

should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

T = 25˚C unless stated otherwise

case

Symbol

Parameter

Test Conditions

Max. Units

VCES

VGES

I

C

IC(PK)

Pmax

I2t

V

isol

Collector-emitter voltage

VGE = 0V

Gate-emitter voltage

-

Continuous collector current

Tcase = 65˚C

Peak collector current

1ms, Tcase = 110˚C

Max. transistor power dissipation T = 25˚C, T = 150˚C

case

j

Diode I2t value

VR = 0, tp = 10ms, Tvj = 125˚C

Isolation voltage - per module

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

1700 V

±20 V

200 A

400 A

1488 W

7.5 kA2s

4000 V

2/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

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